Semiconductor device

A semiconductor device comprising:

• a first-conductivity-type region provided ion a semiconductor substrate;
• a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate;
• a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction;
• a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion;
• and
• a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction, wherein
• a first floating region and a second floating region are provided in the mesa portion as the floating region;
• an end of the first floating region in the extending direction and an end of the second floating region in the extending direction are arranged facing each other in the extending direction such that the drift region is provided between the first floating region and the second floating region.

A semiconductor device comprising:

• a first-conductivity-type drift region provided in a semiconductor substrate;
• a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate;
• a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction;
• a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion;
• a second-conductivity-type contact region provided in the mesa portion above the drift region and having a higher doping concentration than the base region;
• a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction;
• and
• a plurality of buffer regions provided below the drift region;
• wherein
• valleys are arranged between the plurality of buffer regions in a concentration distribution, and
• the contact region extends in the extending direction over an end of the floating region in top view of the semiconductor substrate.

A semiconductor device comprising:

• a first-conductivity-type drift region provided in a semiconductor substrate;
• a trench portion provided from an upper surface of the semiconductor substrate to an inside of the semiconductor substrate, and extending in a predetermined extending direction in a plane of the upper surface of the semiconductor substrate;
• a mesa portion provided in contact with the trench portion in an array direction orthogonal to the extending direction;
• a second-conductivity-type base region provided in the mesa portion above the drift region and in contact with the trench portion;
• a second-conductivity-type floating region provided in the mesa portion below the base region, in contact with the trench portion, and provided in at least a part of the mesa portion in the array direction;
• and
• a plurality of buffer regions provided below the drift region;
• wherein
• valleys are arranged between the plurality of buffer regions in a concentration distribution, and
• a gate trench portion and a dummy trench portion are provided as the trench portion.