Vertical power semiconductor device and manufacturing method

A method of manufacturing a vertical power semiconductor device, the method comprising:

• forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms;
• and
• forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks,
• forming a fourth impurity peak in the field stop region by at least one helium ion implantation process,
• wherein a first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks,
• wherein the first impurity peak includes hydrogen and the second impurity peak includes helium,
• wherein the fourth impurity peak is set at a fourth vertical distance from the second main surface, and
• wherein the first impurity peak is arranged between the second impurity peak and the fourth impurity peak along the vertical direction.