Power MOSFET with gate-source ESD diode structure

An apparatus comprising:

• an epitaxial layer over a substrate;
• a plurality of gates formed in the epitaxial layer;
• a body region formed in the epitaxial layer;
• a breakdown voltage enhancement and leakage prevention structure formed in the epitaxial layer, comprising a body ring structure;
• a first source and a second source in the epitaxial layer;
• a gate-source electrostatic discharge (ESD) diode structure over the epitaxial layer, wherein the gate-source ESD diode structure comprises a plurality of n-type regions and a plurality of p-type regions arranged in an alternating manner in an interlayer dielectric layer over the epitaxial layer, and wherein the plurality of n-type regions and the plurality of p-type regions comprise a first p-type region, a first n+ region, a second p-type region, a second n+ region and a third p-type region connected in cascade;
• a source contact connected to the first source and the second source, and to the third p-type region of the gate-source ESD diode structure;
• a gate contact connected to the plurality of gates and the first p-type region of the gate-source ESD diode structure;
• and
• a drain contact on opposing sides of the epitaxial layer of the source contact.