Capacitors with built-in electric fields

An integrated circuit (IC) die, comprising:

• a capacitor, wherein the capacitor includes a top electrode and, a bottom electrode comprising a first bottom electrode region and a second bottom electrode region, wherein the second bottom electrode region has a different material composition than the first bottom electrode;
• and
• a dielectric region between and in contact with the top electrode and the first bottom electrode region, wherein the dielectric region includes a polar dielectric material, the top electrode has a same material composition as the first bottom electrode region, and the top electrode has a different material structure than the first bottom electrode region, the different material structure comprising at least one of a different crystal phase and a different defect density.

An integrated circuit (IC) die, comprising:

• a capacitor, wherein the capacitor includes a top electrode region, a bottom electrode region, and a dielectric region between and in contact with the top electrode region and the bottom electrode region, wherein the dielectric region includes strontium, barium, bismuth, or lead, and the top electrode region has a different defect density from the bottom electrode region, wherein a difference in defect density between the top electrode region and the bottom electrode region is between 1e16 defects per cubic centimeter and 1e20 defects per cubic centimeter.