US 12,224,304 B2Granted

Light emitting diode structure with individual fuctionable LED units and method for manufacturing the same

AssigneeRaysolve Optoelectronics (Suzhou) Company Limited

InventorWing Cheung Chong

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Abstract

The LED structure includes a substrate and a plurality of LED units formed on the substrate. Each LED unit includes a bonding layer formed on the substrate, a first doping type semiconductor layer formed on the bonding layer, a second doping type semiconductor layer formed on the first doping type semiconductor layer, a passivation layer formed on the second doping type semiconductor layer and a portion of the first doping type semiconductor layer; and an electrode layer formed on a portion of the passivation layer and contacting the second doping type semiconductor layer. The plurality of LED units include a first LED unit and a second LED unit adjacent to the first LED unit. The first doping type semiconductor layer of the first LED unit horizontally extends to the first doping type semiconductor layer of the second LED unit adjacent to the first LED unit, and the first LED unit and the second LED unit are individually functionable LED units.

Claims15

Dependent claims

A light emitting diode (LED) structure, comprising:

a substrate;
and
a plurality of LED units formed on the substrate, each LED unit comprising:
a bonding layer formed on the substrate;
a first doping type semiconductor layer formed on the bonding layer;
a second doping type semiconductor layer formed on the first doping type semiconductor layer;
a passivation layer formed on the second doping type semiconductor layer and a portion of the first doping type semiconductor layer;
and
an electrode layer formed on a portion of the passivation layer and contacting the second doping type semiconductor layer,
wherein the plurality of LED units comprise a first LED unit and a second LED unit adjacent to the first LED unit, wherein the first doping type semiconductor layer of the first LED unit horizontally extends to the first doping type semiconductor layer of the second LED unit adjacent to the first LED unit, the first LED unit and the second LED unit are individually functionable LED units, and an opening is formed in the first doping type semiconductor layer between the first LED unit and the second LED unit without disconnecting the first doping type semiconductor layer of the first LED unit from the first doping type semiconductor layer of the second LED unit,
wherein the substrate comprises a driving circuit to drive the plurality of LED units, the driving circuit comprises a contact exposed by the opening in the first doping type semiconductor layer between the first LED unit and the second LED unit, and the contact is electrically connected with the second doping type semiconductor layer of the first LED unit through the electrode layer, and
wherein the bonding layer is formed between the substrate and the first doping type semiconductor layer to bond the substrate and the plurality of LED units.

9 more elements

A method for manufacturing a light emitting diode (LED) structure, comprising:

forming a semiconductor layer on a first substrate, the semiconductor layer comprising a first doping type semiconductor layer and a second doping type semiconductor layer;
performing a first etching operation to remove a portion of the second doping type semiconductor layer and expose a portion of the first doping type semiconductor layer;
forming a first opening in the first doping type semiconductor layer between a first LED unit and a second LED unit without disconnecting the first doping type semiconductor layer of the first LED unit from the first doping type semiconductor layer of the second LED unit, the first LED unit and the second LED unit being adjacent LED units in the LED structure;
forming a passivation layer on the second doping type semiconductor layer and the exposed first doping type semiconductor layer, and the passivation layer covers the first opening;
forming a second opening and a third opening on the passivation layer;
and
forming an electrode layer on the passivation layer covering the second opening and the third opening and contacting the second doping type semiconductor layer,
wherein forming the semiconductor layer on the first substrate further comprises:
forming a driving circuit in the first substrate;
forming the semiconductor layer on a second substrate;
bonding the semiconductor layer onto the first substrate through a bonding layer;
and
removing the second substrate.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/162,515Filed 29 Jan 2021 · us provisional application
Priority: 9 Apr 2020
Published: US 2021/0320145 A114 Oct 2021
Granted: 11 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10H 29/142
Comprising multiple light-emitting semiconductor components: two-dimensional arrangements, e.g. asymmetric LED layout
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers
H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H10H 20/831
Electrodes: characterised by their shape

Family

Application63/007,829Us provisional application · filed 9 Apr 2020
US 2021/0320145 A1Pre-grant publication · published 14 Oct 2021
US 12,224,304 B2This patent

From the US filing history. Foreign family members aren’t listed.

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