US 12,224,303 B2Granted

Manufacturing method of photoelectric conversion panel, photoelectric conversion panel, and X-ray panel

AssigneeSharp Display Technology Corporation

InventorsMakoto Nakazawa, Hiroyuki Moriwaki, Rikiya Takita, Tetsuya Tanishima

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Abstract

In a manufacturing method of a photoelectric conversion panel, a contact hole CH3 that exposes a part of an upper face of a photodiode and a contact hole CH2 that exposes a source connection electrode are formed in a first flattening film and in inorganic insulating films 105a to 105c, an inorganic insulating film 107 is formed, contact holes CH2a and CH3a are formed in the contact holes CH2 and CH3, respectively, and a bias line and a data line are formed in the contact holes CH2a and CH3a, respectively.

Claims6

Dependent claims

A manufacturing method of a photoelectric conversion panel comprising:

forming a transistor on a substrate;
forming a photodiode at an upper layer overlying the transistor;
forming a first insulating film configured to cover the photodiode;
forming a first flattening film configured to cover the first insulating film;
forming a first hole portion configured to expose a part of an upper face of the photodiode in the first flattening film and the first insulating film;
forming a second hole portion configured to expose a source electrode of the transistor or a connection electrode connected to the source electrode in the first flattening film and the first insulating film;
forming a second insulating film configured to cover the first flattening film, a part of the second insulating film being disposed in each of the first hole portion and the second hole portion;
forming a third hole portion in the second insulating film disposed in the first hole portion;
forming a fourth hole portion in the second insulating film disposed in the second hole portion;
forming a bias line at an upper layer overlying the second insulating film, a part of the bias line being disposed in the third hole portion;
and
forming a data line at an upper layer overlying the second insulating film, a part of the data line being disposed in the fourth hole portion.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/197,117Filed 15 May 2023
Priority: JP 2022-08481824 May 2022
Published: US 2023/0387177 A130 Nov 2023
Granted: 11 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10F 39/014
Manufacture or treatment of image sensors covered by group H10F39/12: of CMOS image sensors
G01T 1/2018
With scintillation detectors: scintillation-photodiode combinations
H10F 39/016
Manufacture or treatment of image sensors covered by group H10F39/12: of thin-film-based image sensors
H10F 39/1898
X-ray, gamma-ray or corpuscular radiation imagers: indirect radiation image sensors, e.g. using luminescent members

Family

US 2023/0387177 A1Pre-grant publication · published 30 Nov 2023
US 12,224,303 B2This patent

From the US filing history. Foreign family members aren’t listed.

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