Array substrate, display panel, and manufacturing method of array substrate
AssigneeShenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorChen Dai
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Abstract
An array substrate, a display panel, and a manufacturing method of the array substrate are disclosed. The array substrate includes a substrate and a thin film transistor layer. The thin film transistor layer includes a first thin film transistor, and the first thin film transistor includes a first active layer, a first gate insulating layer, a first source and drain electrode layer, and a first gate electrode disposed on a same layer as the first source and drain electrode layer. Disposing the first gate electrode on the same layer as the first source and drain electrode layer can simplify manufacturing processes.
Claims18
An array substrate, comprising:
- a substrate;
- and
- a thin film transistor layer disposed on the substrate;
- wherein the thin film transistor layer comprises a first thin film transistor, and the first thin film transistor comprises a first active layer, a first gate insulating layer, and a first source and drain electrode layer disposed in a stack on the substrate;
- the first gate insulating layer is disposed between the first active layer and the first source and drain electrode layer, and the first source and drain electrode layer comprises a first source electrode and a first drain electrode electrically connected to the first active layer;
- and
- the first thin film transistor further comprises a first gate electrode disposed on the first gate insulating layer, and the first gate electrode and the first source and drain electrode layer are disposed on a same layer;
- wherein the first thin film transistor further comprises a second gate electrode and an interlayer insulating layer, the second gate electrode is disposed on one side of the first active layer adjacent to the substrate, and the interlayer insulating layer is disposed between the first active layer and the second gate electrode.
A manufacturing method of an array substrate, comprising following steps:
- providing a substrate;
- disposing a first active layer and a first gate insulating layer in sequence on the substrate;
- and
- forming a first gate electrode, a first source electrode, and a first drain electrode on the first gate insulating layer and allowing the first source electrode and the first drain electrode to be electrically connected to the first active layer, wherein the first active layer, the first gate insulating layer, the first gate electrode, the first source electrode, and the first drain electrode form a first thin film transistor;
- wherein the step of disposing the first active layer and the first gate insulating layer in sequence on the substrate comprises following steps:
- disposing a second active layer and a second gate insulating layer in sequence on the substrate;
- forming a second gate electrode and a third gate electrode on the second gate insulating layer and allowing the third gate electrode to correspond to the second active layer;
- disposing an interlayer insulating layer on the second gate electrode and the third gate electrode;
- forming the first active layer on the interlayer insulating layer corresponding to the second gate electrode;
- and
- disposing the first gate insulating layer on the first active layer.
Dependencies are inferred from the claim text.