Integrated circuit device including metal-oxide semiconductor transistors
AssigneeSamsung Electronics Co., Ltd.
InventorsJinhyeok Song, Mingeun Song
Life of this patent
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Abstract
An integrated circuit device including an active region; an active cutting region at a side of the active region in a first direction; a fin active pattern extending on the active region in the first direction, the fin active pattern including a source region and a drain region; a gate pattern extending across the active region and the fin active pattern in a second direction perpendicular to the first direction, the gate pattern not being in the active cutting region; and an isolated gate contact region in contact with the gate pattern outside of the active region.
Claims27
An integrated circuit device, comprising:
- an active region extending in a first direction;
- a plurality of fin active patterns extending in parallel on the active region in the first direction;
- a plurality of gate patterns spaced apart from each other in the first direction, the plurality of gate patterns extending across the active region and the fin active pattern in a second direction perpendicular to the first direction;
- a plurality of isolated gate contact regions, each isolated gate contact region of the plurality of isolated gate contact regions being spaced apart from opposite sides of the active region in the second direction and electrically connected to a first subset of the plurality of gate patterns;
- and
- a plurality of gate cutting regions at sides of the isolated gate contact regions in the first direction,
- wherein the plurality of gate cutting regions extend through a second subset of the plurality of gate patterns to thereby cut the second subset of the plurality of gate patterns into discontinuous sections within the active region.
An integrated circuit device, comprising a unit cell array including multi transistors including:
- an active region extending in a first direction;
- a plurality of fin active patterns extending in parallel on the active region in the first direction;
- a plurality of gate patterns spaced apart from each other in the first direction, the plurality of gate patterns extending across the active region and the plurality of fin active patterns in a second direction perpendicular to the first direction;
- a plurality of isolated gate contact regions, the active region being therebetween and spaced apart therefrom, wherein the plurality of isolated gate contact regions is electrically connected to a first subset of the plurality of gate patterns;
- and
- a plurality of gate cutting regions at sides of the plurality of isolated gate contact regions in the first direction,
- wherein the plurality of gate cutting regions extend through a second subset of the plurality of gate patterns to thereby cut the second subset of the plurality of gate patterns into discontinuous sections within the active region.
Dependencies are inferred from the claim text.