Integrated mult-device chip and package
AssigneeLittelfuse Semiconductor (Wuxi) Co., Ltd.
InventorsTsung-Wen Mou, Lei Shi, Jifeng Zhou
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Abstract
A protection device may include a semiconductor substrate and a thyristor-type device, formed within the semiconductor substrate, where the thyristor device extends from a first main surface of the semiconductor substrate to a second main surface of the semiconductor substrate. The protection device may include a first PN diode, formed within the semiconductor substrate; and a second PN diode, formed within the semiconductor substrate, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode.
Claims17
A protection device, comprising:
- a semiconductor substrate;
- a thyristor-type device, formed within the semiconductor substrate, the thyristor-type device extending from a first main surface of the semiconductor substrate to a second main surface of the semiconductor substrate;
- a first PN diode, formed within the semiconductor substrate;
- a second PN diode, formed within the semiconductor substrate, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode;
- and
- an electrical isolation barrier, extending from the first main surface to the second main surface, and disposed between the second PN diode and the thyristor-type device.
A protection device assembly, comprising:
- a semiconductor substrate having a first main surface and a second main surface, and comprising:
- a thyristor-type device, extending from a first main surface to the second main surface;
- a first PN diode, extending from the second main surface;
- and
- a second PN diode, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode;
- a front surface metal layer, disposed on the first main surface;
- a leadframe, disposed in contact with the second main surface;
- and
- an electrical isolation barrier, extending from the first main surface to the second main surface, and disposed between the second PN diode and the thyristor-type device.
A line protection device, comprising:
- a semiconductor substrate having a first main surface and a second main surface, the semiconductor substrate comprising;
- a thyristor-type device, extending from a first main surface to the second main surface;
- a first PN diode, extending from the second main surface;
- a second PN diode, wherein the thyristor-type device is arranged in electrical series between the first PN diode and the second PN diode;
- and
- an electrical isolation barrier, extending from the first main surface to the second main surface, and disposed between the second PN diode and the thyristor-type device;
- a front surface metal layer, disposed on the first main surface;
- and
- a leadframe, disposed in contact with the second main surface, the leadframe comprising a plurality of leads, arranged electrically in parallel to one another.
Dependencies are inferred from the claim text.