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US 12,224,271 B2Granted
Integrating control circuits with light emissive circuits with dissimilar wafer sizes
AssigneeMeta Platforms Technologies, LLC
InventorRajendra D. Pendse
Life of this patent
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Abstract
In some examples, an article comprises a semiconductor including at least one integrated circuit, a μLED array on a first surface of the semiconductor, and a fill material disposed on a first edge of the semiconductor. The first edge of the μLED array or the semiconductor is oriented substantially perpendicular to the first surface of the semiconductor.
Claims19
An article comprising:
- a first semiconductor including at least one integrated circuit;
- a first μLED array on a first surface of the first semiconductor;
- a fill material disposed on a first edge of the first semiconductor and extending in a direction substantially perpendicular to the first surface of the first semiconductor to be also disposed on a first edge of the first μLED array, wherein the first edge of the first μLED array and the first edge of the first semiconductor are substantially co-planar and are oriented substantially perpendicularly to the first surface of the first semiconductor;
- and
- a second semiconductor including at least one integrated circuit, wherein the fill material joins the first and second semiconductors.
2 more elements
A method comprising:
- attaching at least one semiconductor including at least one integrated circuit and a μLED array to a carrier wafer, wherein the carrier wafer has a diameter different than a diameter of the at least one semiconductor;
- after attaching the at least one semiconductor to the carrier wafer, encapsulating the at least one semiconductor with a fill material;
- forming at least one through substrate via in the at least one semiconductor, wherein the diameter of the carrier wafer is larger than the diameter of the at least one semiconductor;
- and
- thinning and planarizing the at least one semiconductor and the fill material to a predetermined thickness, wherein the fill material comprises an oxide.
2 more elements
A method comprising:
- attaching a first wafer to a carrier wafer, wherein the first wafer comprises a semiconductor comprising a plurality of μLED arrays on a plurality of corresponding integrated circuits, wherein the carrier wafer has a diameter different than a diameter of the first wafer;
- after attaching the first wafer to the carrier wafer, encapsulating the first wafer with a fill material;
- forming at least one through substrate via in a substrate of at least one of the plurality of integrated circuits;
- and
- thinning and planarizing the semiconductor and the fill material to a predetermined thickness.
2 more elements
Dependencies are inferred from the claim text.