Optoelectronic device in which the pixels contain light-emitting diodes that emit several colors and manufacturing method

A method for manufacturing an optoelectronic device comprising a plurality of pixels, wherein the formation of said plurality of pixels comprises the implementation of a first phase comprising, for each pixel, in forming at least one primary sub-pixel comprising at least one primary light-emitting diode adapted to emit a first light radiation having substantially a first wavelength and formed on a support face of a substrate, the first phase comprising the following steps:

• a) formation, on the support face of the substrate, of at least one first primary semiconductor portion intended to be electrically connected to a first electrode and doped according to a first doping type selected among a N-type doping and a P-type doping, the first primary semiconductor portion having a generally wired shape elongated along a longitudinal axis extending in a first direction generally perpendicular to the support face of the substrate, the first primary semiconductor portion including a top end opposite to a proximal end of the first primary semiconductor portion facing towards the support face of the substrate;
• b) formation of at least one primary lattice parameter accommodation layer at least on, and in contact with, the top end of the first primary semiconductor portion formed in step a);
• c) formation of a second primary active semiconductor portion by epitaxial growth from the primary lattice parameter accommodation layer formed in step b), the second primary active semiconductor portion being arranged on, and in contact with, the primary lattice parameter accommodation layer;
• d) formation of a third primary semiconductor portion intended to be electrically connected to a second electrode and doped according to a second doping type opposite to the first doping type, at least on, and in contact with, the second primary active semiconductor portion;
• the second primary active semiconductor portion formed in step c) being configured so as to emit said first light radiation when at least one of the first and second electrodes is powered;
• and wherein the primary lattice parameter accommodation layer formed in step b) has, at least at its interface with the second primary active semiconductor portion formed in step c), a first difference in primary lattice parameters comprised between 2.12% and 0.93% relative to the second primary active semiconductor portion.

An optoelectronic device comprising a primary sub-pixel including at least one primary light-emitting diode formed on a support face of a substrate and a secondary sub-pixel including at least one secondary light-emitting diode formed on the support face, wherein:

• the primary light-emitting diode comprises:
• a first primary semiconductor portion having a general wired shape doped according to a first doping type, the first primary semiconductor portion extending from the support face;
• a primary lattice parameter accommodation layer arranged at least on, and in contact with, a top end and lateral surfaces of the first primary semiconductor portion;
• a second primary active semiconductor portion formed by epitaxial growth from the primary lattice parameter accommodation layer;
• a third primary semiconductor portion doped according to a second doping type opposite to the first doping type and arranged on, and in contact with, the second primary active semiconductor portion;
• the secondary light-emitting diode comprises:
• a first secondary semiconductor portion having a general wired shape doped according to a first doping type, the first secondary semiconductor portion extending from the support face;
• a secondary lattice parameter accommodation layer arranged at least on, and in contact with, a top end and lateral surfaces of the first secondary semiconductor portion;
• a second secondary active semiconductor portion formed by epitaxial growth from the secondary lattice parameter accommodation layer;
• a third secondary semiconductor portion doped according to a second doping type opposite to the first doping type and arranged on, and in contact with, the second secondary active semiconductor portion;
• wherein each of the primary lattice parameter accommodation layer and the secondary lattice parameter accommodation layer comprises a stack of at least first and second sublayers successively arranged from respectively the first primary semiconductor portion and the first secondary semiconductor portion, the second primary active semiconductor portion being in contact with the first sublayer of the primary lattice parameter accommodation layer, the second secondary active semiconductor portion being in contact with the second sublayer of the secondary lattice parameter accommodation layer.

A method for manufacturing an optoelectronic device comprising a primary sub-pixel including at least one primary light-emitting diode formed on a support face of a substrate and a secondary sub-pixel including at least one secondary light-emitting diode formed on the support face of the substrate, the method including the following steps:

• forming semiconductor portions on the support face including a first primary semiconductor portion and a first secondary semiconductor portion having each a general wired shape doped according to a first doping type and extending each from the support face;
• forming lattice accommodation layers comprising primary and secondary lattice parameter accommodation layers respectively on the first primary semiconductor portion and on the first secondary semiconductor portion, the step of forming the lattice accommodation layers comprising:
• stacking at least a first and a second sublayers successively on at least a top end of the first primary semiconductor portion and the first secondary semiconductor portion;
• selectively removing at least the top end of the second sublayer at the level of the first primary semiconductor portion so that the primary lattice parameter accommodation layer having the top end of the first sublayer exposed thereon;
• forming a second primary active semiconductor portion by epitaxial growth at least from the exposed first sublayer of the primary lattice parameter accommodation layer formed on the first primary semiconductor portion;
• forming a second secondary active semiconductor portion by epitaxial growth from the secondary lattice parameter accommodation layer having a stack of the first and second sublayers at the top of the first secondary semiconductor portion.