Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• an integrated circuit (IC) component comprising a first side, a second side opposite to the first side, and a sidewall connected to the first side and the second side;
• an insulating layer covering the sidewall of the IC component;
• a redistribution structure disposed on the insulating layer and electrically connected to the first side of the IC component;
• and
• a warpage control portion connecting the second side of the IC component, the warpage control portion comprising a substrate and a metal pattern over the substrate, and the metal pattern being electrically floating, wherein the metal pattern is located within a distribution region overlapping an orthographic projection area of the IC component.

A semiconductor structure, comprising:

• an integrated circuit (IC) component;
• an insulating layer laterally encapsulating the IC component;
• a redistribution structure disposed on the insulating layer and a front side of the IC component, the redistribution structure being electrically connected to the IC component;
• and
• a warpage control portion coupling to a back side of the IC component, the warpage control portion comprising:
• a substrate;
• a patterned dielectric layer disposed between the substrate and the IC component;
• and
• a metal pattern embedded in the patterned dielectric layer and electrically floating in the warpage control portion, wherein outer sidewalls of the redistribution structure, the insulating layer, and the warpage control portion are substantially leveled with one another.