US 12,224,250 B2Granted

Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method

AssigneeShibaura Mechatronics Corporation

InventorsHisashi Nishigaki, Atsushi Fujita, Shohei Tanabe, Yoshinao Kamo, Shigeki Matsunaka

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Abstract

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

Claims15

Dependent claims

A film formation apparatus,

the apparatus being configured to form an electromagnetic wave attenuator, the attenuator including a first structure body,
the first structure body including
a first member in which a plurality of first magnetic layers and a plurality of first nonmagnetic layers are alternately stacked, and
a second member in which a plurality of second magnetic layers and a plurality of second nonmagnetic layers are alternately stacked,
a thickness of one of the plurality of first magnetic layers being greater than a thickness of one of the plurality of second magnetic layers,
the apparatus comprising:
a container configured to maintain an atmosphere depressurized from atmospheric pressure;
a first film formation part, a second film formation part, and a third film formation part, the first, second, and third film formation parts being provided in the container, the first, second, and third film formation parts including a sputter source to form the electromagnetic wave attenuator by depositing a film formation material on a processing body by sputtering;
a transfer part provided in the container, the transfer part being configured to circulatively transfer the processing body in a circumferential trajectory to the first film formation part, the second film formation part, and the third film formation part;
and
a controller configured to control the first, second and third film formation parts, and the transfer part,
when forming one of the plurality of first magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part and the second film formation part,
cause the first film formation part to form a part of the one of the plurality of first magnetic layers, and cause the second film formation part to form remaining portion the one of the plurality of first magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of first magnetic layers, and
cause the third film formation part to form one of the plurality of first nonmagnetic layers, and
when forming one of the plurality of second magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part and the second film formation part,
cause the first film formation part to form the one of the plurality of second magnetic layers and cause the second film formation part to form an other one of the plurality of second magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of second magnetic layers, and
cause the third film formation part to form one of the plurality of second nonmagnetic layers.

18 more elements

A film formation apparatus,

the apparatus being configured to form an electromagnetic wave attenuator, the attenuator including a first structure body,
the first structure body including
a first member in which a plurality of first magnetic layers and a plurality of first nonmagnetic layers are alternately stacked, and
a second member in which a plurality of second magnetic layers and a plurality of second nonmagnetic layers are alternately stacked,
a thickness of one of the plurality of first magnetic layers being greater than a thickness of one of the plurality of second magnetic layers,
the apparatus comprising:
a container configured to maintain an atmosphere depressurized from atmospheric pressure;
a first film formation part, a second film formation part, and a third film formation part, the first, second, and third film formation parts being provided in the container, the first, second, and third film formation parts including a sputter source to form the electromagnetic wave attenuator by depositing a film formation material on a processing body by sputtering;
a transfer part provided in the container, the transfer part being configured to circulatively transfer the processing body in a circumferential trajectory to the first film formation part, the second film formation part, and the third film formation part;
and
a controller configured to control the first, second and third film formation parts, and the transfer part,
when forming one of the plurality of first magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of first magnetic layers, or cause the second film formation part to form the one of the plurality of first magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of first magnetic layers, and
cause the third film formation part to form one of the plurality of first nonmagnetic layers, and
when forming one of the plurality of second magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of second magnetic layers, or cause the second film formation part to form the one of the plurality of second magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of second magnetic layers, and
cause the third film formation part to form one of the plurality of second nonmagnetic layers, and
a formation time of the one of the plurality of first magnetic layers being longer than a formation time of the one of the plurality of second magnetic layers.

19 more elements

A film formation apparatus,

the apparatus being configured to form an electromagnetic wave attenuator, the attenuator including a first structure body,
the first structure body including
a first member in which a plurality of first magnetic layers and a plurality of first nonmagnetic layers are alternately stacked, and
a second member in which a plurality of second magnetic layers and a plurality of second nonmagnetic layers are alternately stacked,
a thickness of one of the plurality of first magnetic layers being greater than a thickness of one of the plurality of second magnetic layers,
the apparatus comprising:
a container configured to maintain an atmosphere depressurized from atmospheric pressure;
a first film formation part or a second film formation part, and a third film formation part, the first or second formation part and the third film formation part being provided in the container, the first or second film formation part and the third film formation part including a sputter source to form the electromagnetic wave attenuator by depositing a film formation material on a processing body by sputtering;
a transfer part provided in the container, the transfer part being configured to circulatively transfer the processing body in a circumferential trajectory to the first film formation part or the second film formation part, and the third film formation part;
and
a controller configured to control the first or second film formation part, the third film formation part, and the transfer part,
when forming one of the plurality of first magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of first magnetic layers, or cause the second film formation part to form the one of the plurality of first magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of first magnetic layers, and
cause the third film formation part to form one of the plurality of first nonmagnetic layers, and
when forming one of the plurality of second magnetic layers, the controller being configured to
cause the transfer part to circulatively transfer the processing body to the first film formation part or the second film formation part,
cause the first film formation part to form the one of the plurality of second magnetic layers, or cause the second film formation part to form the one of the plurality of second magnetic layers,
cause the transfer part to circulatively transfer the processing body to the third film formation part after the forming the one of the plurality of second magnetic layers, and
cause the third film formation part to form one of the plurality of second nonmagnetic layers, and
a formation time of the one of the plurality of first magnetic layers being longer than a formation time of the one of the plurality of second magnetic layers.

19 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/328,892Filed 5 Jun 2023 · division
Priority: JP 2020-05594826 Mar 2020
Published: US 2023/0326875 A112 Oct 2023
Granted: 11 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10W 42/20
Arrangements for protection of devices: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
C23C 14/3464
Sputtering: using more than one target
H01F 10/265
Characterised by the substrate or intermediate layers: magnetic multilayers non exchange-coupled
H01F 10/30
Characterised by the substrate or intermediate layers: characterised by the composition of the intermediate layers , e.g. seed, buffer, template,…

Family

Application17/205,098Parent of this division · filed 18 Mar 2021
US 2023/0326875 A1Pre-grant publication · published 12 Oct 2023
US 11,710,707 B2Parent of this division
US 2021/0305171 A1Published application
US 12,224,250 B2This patent

From the US filing history. Foreign family members aren’t listed.

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