Semiconductor wafer and semiconductor dies formed therefrom including grooves along long edges of the semiconductor dies
AssigneeSanDisk Technologies LLC
InventorsChin-Tien Chiu, Jia Li, Dongpeng Xue, Huirong Zhang, Guocheng Zhong, Xiaohui Wang, Hua Tan
Life of this patent
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Abstract
A semiconductor wafer includes semiconductor dies and laser grooves formed in the scribe lines along the long edges of the semiconductor dies. A laser groove extends between the long edges of two adjacent semiconductor dies to encompass the corners of the two adjacent semiconductor dies. When diced, the resulting semiconductor dies have portions of the corners removed.
Claims15
A semiconductor wafer having an x-axis and a y-axis, the semiconductor wafer comprising:
- a plurality of semiconductor dies comprising integrated circuits, each of the plurality of semiconductor dies comprising a length oriented along the y-axis and a width oriented along the x-axis, the length being longer than the width;
- a first set of scribe lines oriented along the y-axis between adjacent semiconductor dies of the plurality of semiconductor dies;
- a second set of scribe lines oriented along the x-axis between adjacent semiconductor dies of the plurality of semiconductor dies;
- a plurality of grooves formed in the first set of scribe lines oriented along the y-axis, the plurality of grooves extending along a first portion the length of a first semiconductor die of the plurality of semiconductor dies, and along a second portion of a second semiconductor die of the plurality of semiconductor dies, the second semiconductor die being adjacent to the first semiconductor die along the y-axis;
- wherein a groove of the plurality of grooves is formed to a depth which is greater than a thickness of the semiconductor wafer after the semiconductor wafer is thinned to its final thickness.
A semiconductor die formed from a semiconductor wafer, the semiconductor die comprising:
- a first major surface;
- a second major surface opposed to the first major surface;
- a length defined by long edges of the semiconductor die;
- a width defined by short edges of the semiconductor die, the length being greater than the width;
- an active area on the first major surface including integrated circuits;
- a border surrounding the active area along the long and short edges of the semiconductor die;
- and
- one or more grooves formed within the border and extending from one or more corners of the semiconductor die partially along one or both long edges of the semiconductor die, the one or more grooves configured to prevent damage to the semiconductor die.
A semiconductor die formed from a semiconductor wafer, the semiconductor die comprising:
- a first major surface;
- a second major surface opposed to the first major surface;
- a length defined by long edges of the semiconductor die;
- a width defined by short edges of the semiconductor die, the length being greater than the width;
- an active area on the first major surface including integrated circuits;
- a border surrounding the active area along the long and short edges of the semiconductor die;
- and
- means for preventing cracking of the semiconductor die within the border and extending from one or more corners of the semiconductor die partially along one or both long edges of the semiconductor die.
Dependencies are inferred from the claim text.