Semiconductor device and manufacturing method thereof including a conductive-material etching process to further adjust a via shape

A method of manufacturing a semiconductor device comprising:

• forming a first conductive pattern in a first interlayer dielectric (ILD) layer disposed over a substrate;
• forming a second ILD layer over the first conductive pattern and the first ILD layer;
• forming a via contact in the second ILD layer to contact an upper surface of the first conductive pattern;
• forming a second conductive pattern over the via contact wherein a part of an upper surface of the via contact is exposed from the second conductive pattern at both sides of the second conductive pattern in plan view;
• etching the part of the via contact, thereby forming spaces between the via contact and the second ILD layer;
• and
• forming a third ILD layer over the second ILD layer, wherein:
• the second conductive pattern is formed by etching using a hard mask pattern as an etching mask, and
• the part of the via contact is etched by using the hard mask pattern as an etching mask.

A method of manufacturing a semiconductor device comprising:

• forming a first conductive pattern in a first interlayer dielectric (ILD) layer disposed over a substrate;
• forming a second ILD layer over the first conductive pattern and the first ILD layer;
• forming a via contact in the second ILD layer to contact an upper surface of the first conductive pattern;
• forming a second conductive pattern over the via contact wherein a part of an upper surface of the via contact is exposed from the second conductive pattern in plan view;
• etching the second ILD layer to expose at least a part of a side face of the via contact;
• etching the part of the upper surface of the via contact by using the second conductive pattern as an etching mask;
• and
• forming a third ILD layer over the second ILD layer.