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US 12,224,225 B2Granted
Semiconductor circuit structure with direct die heat removal structure
AssigneeInvention and Collaboration Laboratory, Inc.
InventorChao-Chun Lu
Life of this patent
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Abstract
Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. Wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2.
Claims20
A semiconductor circuit structure comprising:
- a semiconductor substrate with an original semiconductor surface;
- a set of active regions within the semiconductor substrate;
- a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction to a spare STI region, wherein the spare STI region is remote from the set of active regions;
- the spare STI region is connected to the first STI region, and the heat removing layer extends along the first direction to the spare STI region;
- wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2;
- and
- a heat removing pad within the spare STI region, wherein the heat removing layer is connected to the heat removing pad.
4 more elements
A semiconductor circuit structure comprising:
- a semiconductor substrate with an original semiconductor surface;
- a first set of active regions within the semiconductor substrate and extending along a first direction;
- a second set of active regions within the semiconductor substrate and extending along the first direction;
- and
- a first shallow trench isolation (STI) region between the first set of active regions and the second set of active regions, the first shallow trench isolation (STI) region extending along the first direction to a spare STI region which is remote from the first set of active regions and the second set of active regions;
- wherein the first STI region includes a heat removing layer extending along the first direction to the spare STI region, and the thermal conductivity of the heat removing layer is higher than that of SiO2;
- wherein the spare STI region is connected to the first STI region and includes a heat removing pad within the spare STI region, wherein the heat removing layer is connected to the heat removing pad.
4 more elements
Dependencies are inferred from the claim text.