Semiconductor packages with increased power handling

A semiconductor package comprising:

• a semiconductor die;
• a first lead electrically coupled with the semiconductor die;
• a second lead electrically coupled with the semiconductor die;
• and
• a housing for the semiconductor die, the housing comprising:
• a first side, a second side, and a plurality of peripheral edges of a first material, wherein the plurality of peripheral edges are arranged between the first side and the second side;
• and
• a creepage extension structure of the first material that is part of the first side and is part of a first peripheral edge of the plurality of peripheral edges, wherein the creepage extension structure comprises at least one trench.

A semiconductor package comprising:

• a semiconductor die;
• a first lead electrically coupled with the semiconductor die;
• a second lead electrically coupled with the semiconductor die;
• and
• a housing for the semiconductor die, the housing including a first side, a second side, and a creepage extension structure that is part of the housing and is configured to provide voltage isolation between the first lead and the second lead, the creepage extension structure forming a number of trenches that extend into the housing to provide a creepage distance between the first lead and the second lead that is in a range from 12 millimeters (mm) to 20 mm.