US 12,224,213 B2Granted

High voltage device

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsSung-Hsin Yang, Jung-Chi Jeng, Ru-Shang Hsiao

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Abstract

Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a substrate having a first area and a second area, a plurality of fin structures extending along a direction over the first area and the second area of the substrate, a first transistor and a second transistor in the first area, a first isolation structure disposed between the first transistor and the second transistor, a first isolation structure disposed between the first transistor and the second transistor, a third transistor and a fourth transistor in the second area, and a second isolation structure disposed between the third transistor and the fourth transistor. The first isolation structure includes a first width along the direction and the second isolation structure includes a second width along the direction. The second width is greater than the first width.

Claims20

Dependent claims

A method, comprising:

forming a plurality of fin structures over a substrate, the plurality of fin structures extending lengthwise along a first direction over a first area and a second area of the substrate, the first direction being extending along a top surface of the substrate;
forming a first fin cut trench through more than one of the plurality of the fin structures in the first area;
forming a second fin cut trench through more than one of the plurality of fin structures in the second area;
depositing a dielectric material in the first fin cut trench and the second fin cut trench to form a first isolation feature and a second isolation feature, respectively;
and
forming a first isolation gate structure directly over a top surface of the first isolation feature and a second isolation gate structure directly over a top surface of the second isolation feature,
wherein the first fin cut trench includes a first width along the first direction and the second fin cut trench includes a second width along the first direction,
wherein the forming of the first isolation gate structure and the second isolation gate structure comprises:
forming a first dummy gate stack over the first isolation feature;
forming a second dummy gate stack over the second isolation feature;
replacing the first dummy gate stack with a first isolation gate structure;
and
replacing the second dummy gate stack with a second isolation gate structure wherein a ratio of the second width to the first width is between 3 and 30.

10 more elements

A method, comprising:

receiving a workpiece comprising a plurality of fin structures extending continuously along a first direction over a first area and a second area;
forming a first patterned photoresist layer over the workpiece;
etching the workpiece using the first patterned photoresist layer as an etch mask to form a first fin cut trench in the first area, the first fin cut trench extending lengthwise along a second direction perpendicular to the first direction and comprising a first trench width along the first direction;
forming a second patterned photoresist layer over the workpiece, including over the first fin cut trench;
etching the workpiece using the second patterned photoresist layer as an etch mask to form a second fin cut trench in the second area, the second fin cut trench extending lengthwise along the second direction and comprising a second trench width along the first direction;
forming a first isolation feature in the first fin cut trench and a second isolation feature in the second fin cut trench;
forming a first dummy gate stack directly over the first isolation feature and a second dummy gate stack over a first channel region of the plurality of fin structures in the first area;
forming a third dummy gate stack directly over the second isolation feature and a fourth dummy gate stack over a second channel region of the plurality of fin structures in the second area;
and
replacing the first dummy gate stack, the second dummy gate stack, the third dummy gate stack, and the fourth dummy gate stack with a first gate structure, a first isolation gate structure, a second gate structure, and a second isolation gate structure, respectively,
wherein, along the first direction, the first dummy gate stack comprises a first width, the second dummy gate stack comprises a second width, the third dummy gate stack comprises a third width, and the fourth dummy gate stack comprises a fourth width,
wherein the fourth width is greater than the second width,
wherein a ratio of the second trench width to the first trench width is between 3 and 30.

10 more elements

A method, comprising:

receiving a workpiece comprising a plurality of fin structures extending continuously along a first direction over a first area and a second area;
forming a first patterned photoresist layer over the workpiece;
etching the workpiece using the first patterned photoresist layer as an etch mask to form a first fin cut trench in the first area, the first fin cut trench extending lengthwise along a second direction perpendicular to the first direction;
forming a second patterned photoresist layer over the workpiece;
etching the workpiece using the second patterned photoresist layer as an etch mask to form a second fin cut trench in the second area, the second fin cut trench extending lengthwise along the second direction;
forming a first isolation feature in the first fin cut trench and a second isolation feature in the second fin cut trench;
forming a first dummy gate stack directly over the first isolation feature and a second dummy gate stack over a first channel region of the plurality of fin structures in the first area;
forming a third dummy gate stack directly over the second isolation feature and a fourth dummy gate stack over a second channel region of the plurality of fin structures in the second area;
and
replacing the first dummy gate stack, the second dummy gate stack, the third dummy gate stack, and the fourth dummy gate stack with a first gate structure, a first isolation gate structure, a second gate structure, and a second isolation gate structure, respectively,
wherein the first fin cut trench comprises a first width along the first direction,
wherein the second fin cut trench comprises a second width along the first direction,
wherein a ratio of the second width to the first width is between 3 and 30.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/008,251Filed 31 Aug 2020
Published: US 2022/0068721 A13 Mar 2022
Granted: 11 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification19 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H03M 1/068
Using additional components or elements, e.g. dummy components: the original and additional components or elements being complementary to each…
H10D 62/115
Isolations within a component, i.e. internal isolations: dielectric isolations, e.g. air gaps
H10D 64/017
Manufacture or treatment: using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e.…

Family

US 2022/0068721 A1Pre-grant publication · published 3 Mar 2022
US 12,224,213 B2This patent

From the US filing history. Foreign family members aren’t listed.

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