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US 12,224,206 B2Granted
Conductive structure, semiconductor structure and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorPing-Heng Wu
Life of this patent
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Abstract
A conductive structure includes: a conductive pillar and at least one embedded block arranged in the conductive pillar, a coefficient of thermal expansion of the embedded block being less than that of the conductive pillar. When the conductive pillar is heated and expanded, an extrusion effect of the conductive pillar on a structure adjacent to the conductive pillar can be reduced, thereby improving the performance of the semiconductor structure.
Claims10
A semiconductor structure, comprising:
- a base comprising a substrate, a first dielectric layer on the substrate, and a second dielectric layer on one side of the first dielectric layer away from the substrate;
- an electrical connection layer, the electrical connection layer being located in the second dielectric layer;
- and
- a conductive structure being located in the base, wherein the conductive structure comprises:
- a conductive pillar being passed through the substrate and the first dielectric layer and being electrically connected to the electrical connection layer;
- and
- at least one embedded block being located in the substrate and in the first dielectric layer, wherein the at least one embedded block is provided at one end of the conductive pillar facing the electrical connection layer and is in contact with the conductive pillar;
- wherein a coefficient of thermal expansion of the at least one embedded block is less than that of the conductive pillar;
- and
- a distance between the at least one embedded block and the electrical connection layer is within a preset range along a direction perpendicular to the surface of the substrate, and the preset range is 5-50 nm.
7 more elements
A semiconductor structure manufacturing method, comprising:
- providing a substrate, and forming a first dielectric layer on the substrate;
- etching the substrate and the first dielectric layer to form at least one first through hole;
- filling the first through hole to form an embedded block;
- forming a second dielectric layer on one side of the first dielectric layer away from the substrate, and forming an electrical connection layer in the second dielectric layer, wherein the substrate, the first dielectric layer and the second dielectric layer are formed as a base;
- etching the substrate and the first dielectric layer until the electrical connection layer is exposed to form at least one second through hole, at least one embedded block being located in the second through hole;
- and
- filling the second through hole to form a conductive pillar, a coefficient of thermal expansion of the embedded block being less than that of the conductive pillar.
4 more elements
Dependencies are inferred from the claim text.