Apparatus and method of forming a semiconductor layer
AssigneeInfineon Technologies AG
InventorsOlaf Fiedler, Daniel Kai Simon
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Abstract
A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.
Claims11
A method of forming a silicon layer, the method comprising:
- introducing a source gas containing a precursor material and a carrier gas into a reactor;
- controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas;
- introducing an auxiliary gas into the reactor;
- and
- controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor made up of the source gas flow and the auxiliary gas flow is held constant when the gas flow of the source gas changes.
Dependencies are inferred from the claim text.