Magnesium oxide sputtering target
AssigneeJX Advanced Metals Corporation
InventorsHiroki Kajita, Yoshitaka Shibuya, Satoyasu Narita
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Abstract
A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.
Claims3
A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed under a microscope is 20% or more and 50% or less;
- wherein the ratio of crystal grains of the magnesium oxide sintered body in which 20 or more pinholes are observed is calculated based on the following formula:
- (ratio of crystal grains in which 20 or more pinholes are observed)={(number of crystal grains in which 20 or more pinholes are observed in a visual field under the microscope)/(total number of crystal grains in the visual field)}×100;
- wherein the pinholes have a diameter of about 1 μm and exist within the crystal grains;
- and wherein an average crystal grain size of the sputtering target is 35 μm or more to 400 μm or less.
Dependencies are inferred from the claim text.