Plasma processing apparatus
AssigneeHitachi High-Tech Corporation
InventorsYoshinori Yoshida, Yutaka Kouzuma, Kazuyuki Hirozane
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AssigneeHitachi High-Tech Corporation
InventorsYoshinori Yoshida, Yutaka Kouzuma, Kazuyuki Hirozane
Estimating the term…
A plasma processing apparatus that can inhibit clustering of gas and supply the gas stably, including an integrated gas box configured to adjust the flow rate of gas, and a discharge portion, and the integrated gas box includes gas blocks including a flow path through which the gas flows, a heater configured to heat the flow path, a bypass path provided in the flow path, and a flow controller configured to detect the inflow amount of the gas and output the gas from the flow path to the discharge portion. The heater is configured to perform heating to a predetermined temperature based on the type of the gas. The predetermined temperature is, for example, 65° C. or more. The bypass path includes a flow path causing a change in the pressure of the gas flowing through the flow path.
A plasma processing apparatus comprising:
Dependencies are inferred from the claim text.