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AssigneeSK hynix Inc.
InventorsJung Dal Choi, Jung Shik Jang, Jin Kook Kim, Dong Sun Sheen, Se Young Oh, Ki Hong Lee, Dong Hun Lee, Sung Hoon Lee, Sung Yong Chung
Estimating the term…
The present technology includes a semiconductor memory device. The semiconductor memory device includes a first channel pattern and a second channel pattern each extending in a vertical direction and facing each other, a channel separation pattern formed between the first channel pattern and the second channel pattern and extending in the vertical direction, a stack including conductive patterns each surrounding the first channel pattern, the second channel pattern, and the channel separation pattern and stacked apart from each other in the vertical direction, a first memory pattern disposed between each of the conductive patterns and the first channel pattern, and a second memory pattern disposed between each of the conductive patterns and the second channel pattern.
A semiconductor memory device comprising:
Dependencies are inferred from the claim text.