Read level compensation for partially programmed blocks of memory devices

A method comprising:

• responsive to receiving a read request that specifies a block within a plurality of blocks of a memory device, determining a value of a metric reflective of a number of programmed wordlines of the block;
• responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric;
• and
• performing, using the read voltage offset, a read operation responsive to the read request.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• receiving a read request that specifies a block within a plurality of blocks, the block comprising a plurality of wordlines on a memory device;
• responsive to receiving the read request, determining a value of a metric reflective of a number of programmed wordlines of the block;
• responsive to determining, based on the value of the metric, that the block is in a partially programmed state, identifying a read voltage offset corresponding to the value of the metric;
• and
• issuing, to the memory device, a read command comprising the read voltage offset.