Transient and stable state read operations of a memory device

A memory system, comprising:

• one or more memory devices;
• and
• one or more controllers coupled with the one or more memory devices and configured to cause the memory system to:
• receive, at the memory system, a first read command associated with a first memory cell of a first set of memory cells, wherein the first set of memory cells comprises a first channel;
• read the first memory cell using a first type of read operation based at least in part on determining that the first channel comprises a first voltage condition, wherein the first type of read operation comprises including a delay associated with discharging at least a portion of a charge on the first channel over a first duration, and wherein the first voltage condition is based at least in part on a duration since a previous read operation performed on the first set of memory cells;
• receive a second read command associated with a second memory cell of a second set of memory cells, wherein the second set of memory cells comprises a second channel;
• and
• read the second memory cell using a second type of read operation based at least in part on determining that the second channel comprises a second voltage condition, wherein the second type of read operation comprises refraining from including the delay.

A non-transitory computer-readable medium storing code, the code comprising instructions executable by a processor to:

• receive, at a memory system, a first read command associated with a first memory cell of a first set of memory cells, wherein the first set of memory cells comprises a first channel;
• read the first memory cell using a first type of read operation based at least in part on determining that the first channel comprises a first voltage condition, wherein the first type of read operation comprises including a delay associated with discharging at least a portion of a charge on the first channel over a first duration, and wherein the first voltage condition is based at least in part on a duration since a previous read operation performed on the first set of memory cells;
• receive a second read command associated with a second memory cell of a second set of memory cells, wherein the second set of memory cells comprises a second channel;
• and
• read the second memory cell using a second type of read operation based at least in part on determining that the second channel comprises a second voltage condition, wherein the second type of read operation comprises refraining from including the delay.