Method for determining a manufacturing parameter of a resistive random access memory cell

A method for determining at least one value of at least one manufacturing parameter of a resistive memory cell, the resistive memory cell comprising a stack of thin layers, said method comprising:

• providing several reference memory cells corresponding to several technological alternatives of the stack of thin layers;
• measuring for each reference memory cell an initial resistance value;
• determining for each reference memory cell a programming parameter value selected from among the resistance in a high resistance state and a programming window;
• establishing an equation that defines a relationship between the programming parameter and the initial resistance from the initial resistance values and from the programming parameter values;
• and
• after establishing said relationship, determining said at least one value of said at least one manufacturing parameter for which the programming parameter is greater than or equal to a target value, from said relationship between the programming parameter and the initial resistance and from at least one dependency relationship between the initial resistance and said at least one manufacturing parameter.