Through-silicon via in integrated circuit packaging

A structure, comprising:

• a semiconductor substrate;
• a through-silicon-via (TSV) disposed in the semiconductor substrate;
• a dummy metal layer disposed on and in contact with a first end surface of the TSV and is non-overlapping with the semiconductor substrate;
• a first metal line disposed on a second end surface of the TSV;
• a via disposed on and in contact with the dummy metal layer;
• and
• a second metal line disposed on the via.

A structure, comprising:

• a substrate;
• a through-silicon-via (TSV) disposed in the substrate, wherein a first portion of the TSV extends over a first surface of the substrate and a second portion of the TSV extends below a second surface of the substrate;
• a via disposed on the first portion of the TSV;
• a first interconnect structure disposed on the via;
• and
• a second interconnect structure disposed on the second portion of the TSV.