Unused redundant enable disturb protection circuit

Abstract

A memory device includes a plurality of fuse banks for a memory region. Each fuse bank stores bit information that relates to at least one of a default address for the plurality of fuse banks or an address of a memory cell that is defective. A default address protection circuit is configured to provide a default address status signal indicating whether a fuse bank in the plurality of fuse banks is storing bit information that corresponds to both the default address and an address of a memory cell that is defective. The memory device include a no_match circuit that overrides a repair of the external memory address if the external address matches the default address and if the default address status signal indicates that no fuse bank is storing bit information that corresponds to both the default address and an address of a memory cell that is defective.

Dependencies are inferred from the claim text.