Method for forming semiconductor structure

A method for forming a semiconductor structure, comprising:

• forming a material layer over a substrate;
• forming a bottom layer over the material layer;
• forming a middle layer over the bottom layer, wherein the middle layer comprises an auxiliary, and the auxiliary comprises a plurality of second linkers;
• forming a resist layer over the middle layer, wherein the resist layer comprises an inorganic material, the inorganic material comprises a plurality of first linkers bonded to a plurality of metallic cores;
• exposing a portion of the resist layer by performing an exposure process, wherein the second linkers of the auxiliary bond to the metallic cores through the first linkers during the exposure process;
• and
• removing a portion of the resist layer to form a patterned resist layer by using an ester-based solvent having a formula (b):
• wherein R3 is linear or branched C1-C5 alkyl, or linear or branched C2 alkoxy, and R4 is linear or branched C2-C6 alkyl, or linear or branched C3-C6 alkoxy, wherein a sidewall surface of the middle layer extends beyond a sidewall surface of the patterned resist layer.

A method for forming a semiconductor structure, comprising:

• forming a material layer over a substrate;
• forming a bottom layer over the material layer;
• forming a middle layer over the bottom layer;
• forming a resist layer over the middle layer, wherein the resist layer comprises an inorganic material, and the inorganic material comprises a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores;
• forming a modified layer over the resist layer, wherein the modified layer comprises an auxiliary;
• exposing a portion of the resist layer by performing an exposure process;
• and
• developing the resist layer to form a patterned resist layer to expose a topmost surface of the middle layer which is directly below the patterned resist layer, wherein developing the resist layer is by using cycloheptanone, butyl butyrate, isopropyl butyrate, propyl isobutyrate, butyl 2-methylbutyrate, ethyl trimethylacetate, ethyl valerate, ethyl isovalerate, ethyl 2-methylbutyrate, or methyl 4-methylvalerate.