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AssigneeNissan Chemical Corporation
InventorsTakafumi Endo, Yuichi Goto, Yasunobu Someya, Ryuta Mizuochi, Satoshi Kamibayashi
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A resist underlayer film having, in particular, a high dry etching speed; the resist underlayer film formation composition; a resist pattern formation method, and a method for manufacturing a semiconductor device. The resist underlay film formation composition contains: a bifunctional or higher compound having one or more disulfide bonds; a trifunctional or higher compound and/or a reaction product; and a solvent. The bifunctional or higher compound is a dicarboxylic acid containing a disulfide bond. The trifunctional or higher compound is a compound containing three or more epoxy groups.
A resist underlayer film forming composition comprising a solvent and a reaction product of a tri- or higher functional compound and a bi- or higher functional compound having at least one disulfide linkage,
Dependencies are inferred from the claim text.