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US 12,222,649 B2Granted
Positive resist composition and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Koji Hasegawa
Life of this patent
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Abstract
A positive resist composition comprising a base polymer comprising repeat units having the structure of a sulfonium salt of a fluorinated phenol exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.
Claims13
A positive resist composition comprising a base polymer comprising repeat units (a) having the structure of a sulfonium salt of a fluorinated phenol compound;
- wherein the repeat units (a) have the formula (a):
- wherein RA is hydrogen or methyl,
- X1 is, an ester bond, ether bond, phenylene group or naphthylene group,
- X2 is a single bond, a phenylene group, or a C1-C12 saturated hydrocarbylene group which may contain an ether bond, ester bond, amide bond, lactone ring or sultone ring,
- X3 is a single bond, ester bond or ether bond,
- Rf is a fluorine atom, trifluoromethyl, trifluoromethoxy, or trifluoromethylthio group,
- R1 is a C1-C4 alkyl group,
- R2 to R4 are each independently a halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom, R2 and R3 may bond together to form a ring with the sulfur atom to which they are attached,
- m is an integer of 1 to 4, n is an integer of 0 to 3, and m+n is from 1 to 4.
6 more elements
Dependencies are inferred from the claim text.