Method of manufacturing a semiconductor device and pattern formation method

A method of manufacturing a semiconductor device, comprising:

• combining a first precursor and a second precursor in a vapor state to form a photoresist material,
• wherein the first precursor is selected from the group consisting of
• and
• the second precursor is one or more selected from the group consisting of water, an amine, a borane, and a phosphine;
• depositing the photoresist material over a target layer to be patterned to form a photoresist layer;
• selectively exposing the photoresist layer to actinic radiation;
• and
• applying a developer to the selectively exposed photoresist layer to form a pattern in the photoresist layer.

A method of manufacturing a semiconductor device, comprising:

• forming a resist layer over a target layer to be patterned,
• wherein the resist layer comprises a reaction product of a first precursor and a second precursor,
• wherein the first precursor is selected from the group consisting of
• and
• the second precursor is one or more selected from the group consisting of water, an amine, a borane, and a phosphine;
• and
• patterning the resist layer.