Package and method of forming same

A method of forming a semiconductor device, the method comprising:

• forming a first redistribution structure on a carrier substrate, the first redistribution structure comprising a first metallization pattern;
• attaching a photonic integrated circuit die to the first redistribution structure, the photonic integrated circuit die comprising an optical coupler, an insulating layer over the optical coupler, and a sacrificial layer extending through the insulating layer, the sacrificial layer being over the optical coupler;
• forming an encapsulant on the first redistribution structure and along sidewalls of the photonic integrated circuit die;
• after forming the encapsulant, forming a second redistribution structure on the encapsulant, forming the second redistribution structure comprising:
• forming a first dielectric layer over the encapsulant and the photonic integrated circuit die;
• and
• after forming the first dielectric layer, forming a second metallization pattern over the first dielectric layer;
• and
• after forming the second redistribution structure, forming an opening through the second redistribution structure above the optical coupler.

A method of forming a semiconductor device, the method comprising:

• forming a first redistribution structure on a carrier substrate, the first redistribution structure comprising a first metallization pattern;
• forming through vias on the first redistribution structure;
• attaching a photonic integrated circuit die to the first redistribution structure, the photonic integrated circuit die comprising an optical coupler, wherein the photonic integrated circuit die comprises die connectors and a first insulating layer along sidewalls of the die connectors;
• forming an encapsulant on the first redistribution structure and along sidewalls of the photonic integrated circuit die, an upper surface of the photonic integrated circuit die being level with an upper surface of the encapsulant;
• forming a first opening in the photonic integrated circuit die to expose the optical coupler;
• forming a second redistribution structure on the encapsulant, the second redistribution structure extending into the first opening, the second redistribution structure comprising a second metallization pattern;
• and
• forming a second opening through the second redistribution structure, the second opening exposing the photonic integrated circuit die.