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US 12,222,542 B2Granted
Photonic device on a semiconductor-on-insulator substrate and method of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYueh Ying Lee, Tzu-Chung Tsai, Chien-Ying Wu, Jhih-Ming Lin
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Abstract
A method of fabricating a photonic device includes: forming a photonic device structure that includes a SOI substrate, which includes a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer; forming an electrically conducting layer in electrical contact of the buried oxide layer, and forming a BEOL structure on a surface of the active silicon layer.
Claims20
A method of fabricating a photonic device comprising:
- forming a photonic device structure comprising a SOI substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer;
- forming an electrically conducting layer in electrical contact with the buried oxide layer;
- and
- forming a BEOL structure on a surface of the active semiconductor layer.
1 more element
A method of fabricating a photonic device comprising:
- forming a photonic device structure comprising:
- an SOI substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer on the bulk substrate layer and an active semiconductor layer on the buried oxide layer;
- an electrically conducting layer in electrical contact with the buried oxide layer;
- a BEOL structure on a surface of the active silicon layer;
- and
- placing the formed photonic structure into an electrically conducting holder so that the electrically conducting holder has an electrical contact with the electrically conducting layer.
3 more elements
Dependencies are inferred from the claim text.