LIDAR sensor system including integrated modulator

An autonomous vehicle (AV) control system, comprising:

• one or more processors;
• and
• a photonics integrated circuit (PIC) comprising a semiconductor die, the semiconductor die comprising a substrate having two or more semiconductor stacks respectively associated with two or more different semiconductor devices directly formed on the substrate, the two or more different semiconductor devices respectively configured to receive a beam from a light source and modify the beam,
• wherein a first semiconductor device of the two or more different semiconductor devices comprises a first plurality of layers including the substrate, wherein a second semiconductor device of the two or more different semiconductor devices comprises a second plurality of layers including the substrate, wherein a second arrangement of the second plurality of layers differs from a first arrangement of the first plurality of layers, and wherein the first arrangement of the first plurality of layers and the second arrangement of the second plurality of layers are formed by parallel regrowth on the substrate.

An autonomous vehicle, comprising:

• an autonomous vehicle control system, the autonomous vehicle control system comprising one or more processors;
• and
• a light detection and ranging (LIDAR) system, the LIDAR system comprising:
• a light source configured to output a beam;
• a photonics integrated circuit (PIC) comprising a semiconductor die, the semiconductor die comprising a substrate having two or more semiconductor stacks respectively associated with two or more different semiconductor devices directly formed on the substrate, the two or more different semiconductor devices respectively configured to receive the beam from the light source and modify the beam,
• wherein a first semiconductor device of the two or more different semiconductor devices comprises a first plurality of layers including the substrate, wherein a second semiconductor device of the two or more different semiconductor devices comprises a second plurality of layers including the substrate, wherein a second arrangement of the second plurality of layers differs from a first arrangement of the first plurality of layers, and wherein the first arrangement of the first plurality of layers and the second arrangement of the second plurality of layers are formed by parallel regrowth on the substrate;
• a transmitter configured to receive the beam from the semiconductor die;
• and
• one or more optics configured to receive the beam from the transmitter and emit the beam towards an object.