Integrated circuit with BioFETs
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Tsun Chen, Yi-Hsing Hsiao, Jui-Cheng Huang, Yu-Jie Huang
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTung-Tsun Chen, Yi-Hsing Hsiao, Jui-Cheng Huang, Yu-Jie Huang
Estimating the term…
An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.
An integrated circuit (IC) structure, comprising:
An IC structure comprising:
An IC structure comprising:
Dependencies are inferred from the claim text.