Semiconductor structures and substrates thereof, and methods for manufacturing the same

Abstract

The present disclosure provides a semiconductor structure and substrate thereof, and a method for manufacturing the same. In the method for manufacturing the substrate, at least one of groove is provided in each unit sub-region on a surface of a premanufactured substrate, and the premanufactured substrate includes at least one unit region, each of the at least one unit region includes at least two unit sub-regions; in one of the at least one unit region, the at least two unit sub-regions respectively have different porosities, the premanufactured substrate is annealed to form a substrate, wherein openings of the grooves are healed to form self-healing layers, and the grooves that are not fully healed form gaps. When a susceptor transfers heat to the substrate, the unit sub-regions with different porosities respectively have different heat conduction efficiencies.

Dependencies are inferred from the claim text.