Semiconductor template and fabrication method
AssigneeHexagem AB
InventorsZhaoxia Bi, Jonas Ohlsson, Lars Samuelson
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Abstract
A method for fabrication of an InGaN semiconductor template, comprising growing an InGaN pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.
Claims13
A method for fabrication of an InGaN semiconductor template, comprising:
- growing an InGaN pyramid having inclined facets on a semiconductor substrate;
- processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface;
- growing InGaN, over the first upper surface, to form an InGaN template layer having a c- plane crystal facet forming a top surface;
- and
- depositing a coating layer on the pyramid, prior to removing semiconductor material;
- wherein the processing comprises:
- polishing the thus coated pyramid to form the truncated pyramid, and
- etching the truncated pyramid to remove remaining coating material.
A method for fabrication of an InGaN semiconductor template, comprising:
- growing an InGaN pyramid having inclined facets on a semiconductor substrate;
- processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface;
- and
- growing InGaN, over the first upper surface, to form an InGaN template layer having a c- plane crystal facet forming a top surface;
- wherein the step of processing the pyramid comprises etching the pyramid;
- wherein the etching is performed by in-situ annealing.
Dependencies are inferred from the claim text.