InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and preparation method and application thereof

An InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure, comprising:

• a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top, wherein the InGaN/GaN multiple quantum well layer has a groove and a mesa, the mesa and the groove of the InGaN/GaN multiple quantum well layer are provided with a Si3N4 passivation layer, the Si3N4 passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the Si3N4 passivation layer on the mesa is provided with a second metal layer electrode,
• wherein the embedded electrode is the first metal layer electrode, and the passivation layer structure is the Si3N4 passivation layer.