Solar cell and manufacturing method

A solar cell manufacturing method comprising:

• forming a plurality of cell structures on a semiconductor wafer, each having a first semiconductor layer having a first conductivity type different from the semiconductor wafer, a second semiconductor layer having a same conductivity type as the semiconductor wafer, and a first electrode pattern stacked on the first semiconductor layer and a second electrode pattern stacked on the second semiconductor layer on a rear surface of the semiconductor wafer having the first conductivity type;
• cutting the semiconductor wafer at a boundary between adjacent cell structures;
• wherein
• the plurality of cell structures are arranged in a first direction, each having a same orientation;
• each first semiconductor layer comprises:
• a main functional portion which has a first base end portion formed at a first end portion on a first side of a cell structure in a first direction of the semiconductor wafer over an entire length of the cell structure in a second direction intersecting the first direction and a plurality of first collecting portions extending from the first base end portion toward a second side of the cell structure in the first direction;
• and on which the first electrode pattern is stacked;
• an isolation portion which is formed linearly at a second end portion on the other second side over an entire length of the cell structure in the second direction;
• and on which the first electrode pattern is not stacked, wherein:
• the main functional portion of a first cell structure and the isolation portion of a second cell structure adjacent to the first cell structure are continuously formed, in forming of the first cell structure and the second cell structure;
• and
• the main functional portion of the first cell structure and the isolation portion of the second cell structure are separated from each other, by cutting the semiconductor wafer,
• wherein, within each cell structure, the isolation portion is separated from the first semiconductor layer by the second semiconductor layer.