Loading patent…
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
Estimating the term…
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
A method for manufacturing a semiconductor device comprising an insulating film a gate electrode, an oxide semiconductor film, a source electrode, and a drain electrode the method comprising:
A method for manufacturing a semiconductor device comprising an insulating film, a gate electrode, an oxide semiconductor film, a source electrode, and a drain electrode, the method comprising:
A method for manufacturing a semiconductor device comprising an insulating film, a gate electrode, an oxide semiconductor film, a source electrode, and a drain electrode, the method comprising:
Dependencies are inferred from the claim text.