Semiconductor device comprising oxide semiconductor layer containing a c-axis aligned crystal
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
Claims2
A semiconductor device comprising:
- a first conductive layer;
- a first insulating layer over the first conductive layer;
- an oxide semiconductor layer including a channel formation region of a transistor, over the first insulating layer;
- and
- a second conductive layer in contact with a top surface of the oxide semiconductor layer,
- wherein the first conductive layer is configured to be a gate electrode of the transistor,
- wherein the second conductive layer is configured to be a source electrode or a drain electrode of the transistor,
- wherein the oxide semiconductor layer includes a first region overlapping the first conductive layer, a second region overlapping the first conductive layer and the second conductive layer, and a third region overlapping the second conductive layer,
- wherein the first region includes a crystal grain whose c-axis is aligned, and
- wherein the second region is closer to the first conductive layer than the first region.
Dependencies are inferred from the claim text.