Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
Claims8
A semiconductor device comprising:
- a first transistor in a pixel portion;
- and
- a second transistor in a driver portion,
- wherein the first transistor comprises:
- a first oxide film over an insulating film;
- a first oxide semiconductor film over and in contact with the first oxide film;
- a second oxide film over the first oxide semiconductor film;
- a first source electrode and a first drain electrode electrically connected to the first oxide semiconductor film;
- and
- a first gate electrode over the first oxide semiconductor film,
- wherein the second transistor comprises:
- a third oxide film over the insulating film;
- a second oxide semiconductor film over and in contact with the third oxide film;
- a fourth oxide film over the second oxide semiconductor film;
- a second source electrode and a second drain electrode electrically connected to the second oxide semiconductor film;
- and
- a second gate electrode over the second oxide semiconductor film,
- wherein each of the second oxide film and the fourth oxide film is an island-shaped,
- wherein the first oxide semiconductor film is in contact with a side surface and a top surface of each of the first source electrode and the first drain electrode, and
- wherein the second oxide semiconductor film is in contact with a side surface and a top surface of each of the second source electrode and the second drain electrode.
A semiconductor device comprising:
- a first transistor in a pixel portion, and
- a second transistor in a driver portion,
- wherein the first transistor comprises:
- a first oxide film over an insulating film;
- a first oxide semiconductor film over and in contact with the first oxide film;
- a second oxide film over the first oxide semiconductor film;
- a first source electrode and a first drain electrode electrically connected to the first oxide semiconductor film, and
- a first gate electrode over the first oxide semiconductor film, wherein the second transistor comprises:
- a third oxide film over the insulating film;
- a second oxide semiconductor film over and in contact with the third oxide film;
- a fourth oxide film over the second oxide semiconductor film;
- a second source electrode and a second drain electrode electrically connected to the second oxide semiconductor film;
- and
- a second gate electrode over the second oxide semiconductor film;
- wherein each of the second oxide film and the fourth oxide film is an island-shaped,
- wherein the first oxide semiconductor film is in contact with a side surface and a top surface of each of the first source electrode and the first drain electrode,
- wherein the second oxide semiconductor film is in contact with a side surface and a top surface of each of the second source electrode and the second drain electrode,
- wherein an end portion of the second oxide film is positioned outside an end portion of the first gate electrode, and
- wherein an end portion of the fourth oxide film is positioned outside an end portion of the second gate electrode.
Dependencies are inferred from the claim text.