Thin film transistor and light-emitting diode backplane

A thin film transistor, comprising:

• a first gate;
• a first insulating layer covering the first gate;
• a first source disposed at a side of the first insulating layer away from the first gate in a vertical direction perpendicular to an upper surface of the first gate;
• a semiconductor layer disposed at the side of the first insulating layer away from the first gate;
• a first drain disposed at the side of the first insulating layer away from the first gate;
• a second insulating layer covering the first drain, the semiconductor layer, and the first source;
• and
• a second gate disposed on a surface of a side of the second insulating layer away from the first gate in the vertical direction,
• wherein the first source, the semiconductor layer, and the first drain jointly constitute a vertical channel structure,
• wherein in a horizontal direction parallel to the upper surface of the first gate, the first source and the semiconductor layer are spaced apart and the second insulating layer is disposed between the first source and the semiconductor layer, and
• wherein the semiconductor layer does not overlap the first source in the vertical direction.

A light-emitting diode (LED) backplane, comprising at least one thin film transistor, wherein each of the at least one thin film transistor comprising:

• a first gate;
• a first insulating layer covering the first gate;
• a first source disposed at a side of the first insulating layer away from the first gate in a vertical direction perpendicular to an upper surface of the first gate;
• a semiconductor layer disposed at the side of the first insulating layer away from the first gate;
• a first drain disposed at the side of the first insulating layer away from the first gate;
• a second insulating layer covering the first drain, the semiconductor layer, and the first source;
• and
• a second gate disposed on a surface of a side of the second insulating layer away from the first gate in the vertical direction,
• wherein the first source, the semiconductor layer, and the first drain jointly constitute a vertical channel structure, the first source is electrically connected to a surface of a side of the semiconductor layer close to the first gate through a first conductive film, the first drain is electrically connected to a surface of a side of the semiconductor layer away from the first gate through a second conductive film, the first conductive film is a silver nanowire film, and the second conductive film is a silver nanowire film,
• wherein in a horizontal direction parallel to the upper surface of the first gate, the first source and the semiconductor layer are spaced apart and the second insulating layer is disposed between the first source and the semiconductor layer, and
• wherein the semiconductor layer does not overlap the first source in the vertical direction, and
• wherein the thin film transistor serves as a driving thin film transistor of an LED.