Growth structure for strained channel, and strained channel using the same and method of manufacturing device using the same

A growth structure for a strained channel, comprising:

• a support substrate;
• a strain-relaxed buffer (SRB) layer disposed on a support substrate;
• a base growth layer grown to have a first composition on the SRB layer, wherein the base growth layer comprises:
• a buffer layer disposed on the SRB layer and a p-type layer disposed on the buffer layer,
• a first strained channel layer grown to have a second composition on the base growth layer;
• a first etch-stop layer adjacent to the first strained channel layer;
• and
• a second strained channel layer grown to have a third composition on the first etch-stop layer, wherein the second strained channel layer is adjacent to the first strained channel layer.