Semiconductor device, and method for manufacturing semiconductor device
AssigneeSony Semiconductor Solutions Corporation
InventorsYuki Yanagisawa, Takashi Futatsuki
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Abstract
There is provided a semiconductor device including: a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode layer that is provided on the gate insulating film and contains impurity ions; and source or drain regions that are provided on the semiconductor substrate on both sides of the gate electrode layer and contain conductive impurities, in which a concentration of the impurity ions in the gate electrode layer is higher than concentrations of the conductive impurities in the source or drain regions.
Claims5
A semiconductor device comprising:
- a semiconductor substrate in which a support substrate, an insulating film, and a semiconductor layer are laminated;
- a gate insulating film provided on the semiconductor substrate;
- a sidewall insulating film;
- a gate electrode layer that is provided on the gate insulating film and contains impurity ions, wherein the gate electrode layer is formed in a multilayer structure, wherein at least one layer of the multilayer structure is formed of a polysilicon layer including phosphorus ions, and wherein the polysilicon layer is formed closest to the semiconductor layer;
- and
- source or drain regions that are provided in the semiconductor substrate on both sides of the gate electrode layer and contain conductive impurities, wherein a concentration of the impurity ions in the gate electrode layer is higher than a concentration of the conductive impurities in the source or drain regions.
A method for manufacturing a semiconductor device comprising:
- forming a gate insulating film uniformly on a semiconductor substrate in which a support substrate, an insulating film, and a semiconductor layer are laminated;
- forming a sidewall insulating film;
- forming a gate electrode layer uniformly on the gate insulating film, wherein the gate electrode layer is formed in a multilayer structure, wherein at least one layer of the multilayer structure is formed of a polysilicon layer including phosphorus ions, and wherein the polysilicon layer is formed closest to the semiconductor layer;
- introducing impurity ions into the gate electrode layer;
- patterning the gate insulating film and the gate electrode layer;
- and
- introducing conductive impurities into the semiconductor substrate on both sides of the gate insulating film and the gate electrode layer to form source or drain regions in the semiconductor substrate, wherein a concentration of the impurity ions introduced into the gate electrode layer is higher than a concentration of the conductive impurities introduced into the source or drain regions.
Dependencies are inferred from the claim text.