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US 12,218,236 B2Granted
Devices including heterogeneous channels, and related memory devices, electronic systems, and methods
AssigneeMicron Technology, Inc.
InventorsScott E. Sills, Ramanathan Gandhi, Durai Vishak Nirmal Ramaswamy, Yi Fang Lee, Kamal M. Karda
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Abstract
A transistor comprises a first conductive contact, a heterogeneous channel comprising at least one oxide semiconductor material over the first conductive contact, a second conductive contact over the heterogeneous channel, and a gate electrode laterally neighboring the heterogeneous channel. A device, a method of forming a device, a memory device, and an electronic system are also described.
Claims14
A device, comprising:
- a conductive line;
- a conductive contact on the conductive line;
- pillar structures on the conductive contact, each pillar structure comprising:
- an oxide semiconductor channel comprising a region and at least one additional region, the region oxygen-rich relative to the at least one additional region;
- and
- another conductive contact on the oxide semiconductor channel;
- gate electrodes laterally neighboring the pillar structures;
- and
- dielectric material intervening between the gate electrodes and the pillar structures.
6 more elements
A device, comprising:
- a conductive line;
- a conductive contact on the conductive line;
- pillar structures on the conductive contact, each pillar structure comprising:
- an oxide semiconductor channel comprising a region and at least one additional region,
- the region having one or more of a different material composition and a different atomic concentration of one or more elements than the at least one additional region, and
- the at least one additional region relatively oxygen-rich and metal-lean proximate the region and relatively oxygen-lean and metal-rich distal from the region;
- and
- another conductive contact on the oxide semiconductor channel;
- gate electrodes laterally neighboring the pillar structures;
- and
- dielectric material intervening between the gate electrodes and the pillar structures.
8 more elements
A device, comprising:
- a conductive line;
- a conductive contact on the conductive line;
- pillar structures on the conductive contact, each pillar structure comprising:
- an oxide semiconductor channel comprising:
- a region comprising InxGayZnzO;
- at least one additional region comprising InxO;
- and
- another conductive contact on the oxide semiconductor channel;
- gate electrodes laterally neighboring the pillar structures;
- and
- dielectric material intervening between the gate electrodes and the pillar structures.
8 more elements
A method of forming a device, comprising:
- forming a heterogeneous channel material on a conductive contact on a conductive line, the heterogeneous channel material comprising at least one oxide semiconductor material;
- forming a conductive material on the heterogeneous channel material;
- removing portions of the conductive material and the heterogeneous channel material to form pillar structures on the conductive contact and laterally separated from one another by openings, each pillar structure comprising:
- an oxide semiconductor channel comprising a region and at least one additional region, the region oxygen-rich relative to the least one additional region;
- and
- another conductive contact on the oxide semiconductor channel;
- forming gate electrodes and dielectric material in the openings, the gate electrodes laterally neighboring the pillar structures, and the dielectric material intervening between the gate electrodes and the pillar structures.
4 more elements
Dependencies are inferred from the claim text.