High electron mobility transistor and method of manufacturing the same

A high electron mobility transistor comprising:

• a channel layer including a first semiconductor material;
• a channel supplying layer including a second semiconductor material and causing generation of a two-dimensional electron gas (2DEG) in the channel layer;
• a source electrode and a drain electrode provided on both sides of the channel supplying layer and spaced apart from each other in a first direction;
• a depletion forming layer provided on the channel supplying layer to form a depletion region in the 2DEG;
• a gate electrode provided on a portion of the depletion forming layer;
• and
• a current limiting layer provided to contact the gate electrode on another portion of the depletion forming layer, and configured to limit a current flow from the gate electrode to the depletion forming layer according to a voltage applied to the gate electrode,
• wherein the gate electrode comprises an upper portion in contact with an upper surface of the current limiting layer and a lower portion in contact with a side surface of the current limiting layer,
• wherein the depletion forming layer includes portions spaced apart from each other in a direction parallel to a length of the gate electrode, the direction parallel to the length of the gate electrode being a second direction crossing the first direction,
• wherein the current limiting layer is of an integral type and extends in the direction parallel to the length of the gate electrode,
• the portions of the depletion forming layer are physically separated from each other,
• the portions of the depletion forming layer include a first portion spaced from a second portion, and
• a sidewall of the first portion is spaced apart from and faces a sidewall of the second portion.