Semiconductor device and manufacturing method

A semiconductor device, comprising:

• a semiconductor substrate including a bulk donor;
• an active portion provided in the semiconductor substrate;
• and
• an edge termination structure portion provided between the active portion and an end side of the semiconductor substrate in the semiconductor substrate at an upper surface of the semiconductor substrate,
• wherein the active portion comprises a first high concentration region, wherein the first high concentration region includes hydrogen and has a higher donor concentration than a donor concentration of the bulk donor,
• wherein the semiconductor substrate comprises a buffer region provided below the first high concentration region,
• wherein the edge termination structure portion comprises a second high concentration region above the buffer region,
• wherein the second high concentration region includes hydrogen and has a higher donor concentration than the donor concentration of the bulk donor,
• wherein a distance between an upper surface of the buffer region and an upper surface of the second high concentration region in a depth direction is longer than a distance between the upper surface of the buffer region and an upper surface of the first high concentration region,
• wherein a hydrogen concentration distribution in the depth direction in the first high concentration region has a first hydrogen concentration peak, and
• wherein in the edge termination structure portion, a hydrogen concentration at a same depth position as the first hydrogen concentration peak is lower than a hydrogen concentration at the first hydrogen concentration peak.