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US 12,218,225 B1Granted
Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ming Lin, Kenichi Sano, Wei-Yen Woon, Szuya Liao
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Abstract
The present disclosure provides a method that includes providing a semiconductor structure having a bottom channel region and a top channel region over the bottom channel region; forming a gate dielectric layer over and wrapping around top channels in the top channel region; performing a radical treatment on the dielectric layer in a supercritical fluid; and forming a metal gate electrode on the dielectric layer.
Claims20
A method, comprising:
- providing a semiconductor structure having a bottom channel region and a top channel region over the bottom channel region, wherein the bottom channel region includes bottom channels and the top channel region includes top channels;
- forming an interfacial dielectric layer to wrap around each of the top channels;
- applying a first supercritical carbon dioxide fluid to the interfacial dielectric layer;
- forming a high-k dielectric layer on the interfacial dielectric layer and wrapping around the each of the top channels;
- applying a second supercritical carbon dioxide fluid to the high-k dielectric layer;
- and
- forming a gate electrode on the high-k dielectric layer.
4 more elements
A method, comprising:
- providing a semiconductor structure having a bottom channel region and a top channel region over the bottom channel region;
- forming an interfacial dielectric layer that is wrapping around top channels in the top channel region;
- performing a first radical treatment to the interfacial dielectric layer in a first supercritical carbon dioxide fluid having a first radical chemical dissolved therein;
- forming a high-k dielectric layer over the interfacial dielectric layer and wrapping around the top channels in the top channel region;
- performing a second radical treatment to the high-k dielectric layer in a second supercritical carbon dioxide fluid having a second radical chemical dissolved therein, the second radical chemical being different from the first radical chemical;
- and
- forming a gate electrode on the high-k dielectric layer.
4 more elements
A method, comprising:
- forming bottom channels vertically stacked in a bottom channel region on a bottom substrate;
- forming a bottom source and a bottom drain on the bottom substrate, the bottom source and the bottom drain being interposed by the bottom channel region;
- forming a bottom interfacial layer wrapping around each of the bottom channels;
- performing a thermal annealing process to the bottom interfacial layer at a first temperature greater than 900° C.;
- forming a semiconductor stack of first semiconductor layers and second semiconductor layers alternatively stacked on a top substrate;
- bonding the semiconductor stack formed on the top substrate to the bottom substrate;
- thinning down the top substrate such that the semiconductor stack is exposed;
- patterning the semiconductor stack to form an active region;
- forming a top source and a top drain in the active region, the top source and the top drain being interposed by top channels in a top channel region;
- forming a top gate dielectric layer over and wrapping around the top channels in the top channel region;
- performing a radical treatment to the top gate dielectric layer in a supercritical fluid at a second temperature less than 200° C., wherein the supercritical fluid includes a radical chemical;
- and
- forming a top gate electrode to the top gate dielectric layer.
10 more elements
Dependencies are inferred from the claim text.